The Institute for Semiconductors (IHT) at the RWTH Aachen University is a research institute grouping together an interdisciplinary team of internationally renowned experts devoted to nanometer scale technology and photonics. The main application areas of these activities are information technology, although important applications in the areas of life sciences and renewable energy have additionally been established.

The Institute for Semiconductors has ample experience in ultrafast optoelectronics, nonlinear photonics, and semiconductor processing technology. In the late 80’s, as one of the first research institutions in Europe, femtosecond laser techniques were applied for fundamental time-resolved analysis of ultrafast processes, for the development of coherent THz radiation technologies, and for the development of femtosecond laser based semiconductor analytics. The institute has a longstanding tradition of industrial cooperation, and has coordinated or participated in numerous EU and national research projects. More than 90% of the free capital turnover of the institute originates from third party financing related to research projects. Furthermore, IHT owns a large patent portfolio and has enabled the spin-off of several SMEs.

Since 1999 research activities have been concentrated on the development of different approaches for silicon-based photonics. This expertise in the field of integrated silicon photonics will be an important asset for the CIRCLES OF LIGHT project. IHT is involved in the IST-project Phoenix which aims at the development of efficient ultrafast all-optical switches based on hybridised integrated silicon-on-insulator devices. Furthermore, the institute plays an important role as a sub-coordinating partner in the European Network of Excellence ePIXnet which is devoted to photonic integration.

With respect to the CIRCLES OF LIGHT project, IHT will especially benefit from its expertise in the field of nonlinear photonics in silicon-based structures and THz technology. Nonlinear optical effects were exploited for the characterization of microscopic and electronic properties of Si/SiO2 interfaces and SiC epitaxial films. Electric field induced second harmonic generation was utilized for the analysis of electric fields in Si-based high-frequency devices. Additionally, experience in the fabrication of THz antennas, which are based on ion-implanted silicon-on-sapphire substrates for the reduction of free-carrier lifetimes, is an important asset to the project.